| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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López, N.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2023Growth of GaP1-x-yAsyNx on Si substrates by chemical beam epitaxycitations
- 2018A heterogeneous single-atom palladium catalyst surpassing homogeneous systems for Suzuki coupling
- 2015Fabrication and characterization of multiband solar cells based on highly mismatched alloys
- 2015Fabrication and Characterization of Multiband Solar Cells Based on Highly Mismatched Alloys
- 2011Intermediate band solar cell
- 2011Engineering the electronic band structure for multiband solar cellscitations
Places of action
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article
Engineering the electronic band structure for multiband solar cells
Abstract
Using the unique features of the electronic band structure of GaN <sub>x</sub>As<sub>1-x</sub> alloys, we have designed, fabricated and tested a multiband photovoltaic device. The device demonstrates an optical activity of three energy bands that absorb, and convert into electrical current, the crucial part of the solar spectrum. The performance of the device and measurements of electroluminescence, quantum efficiency and photomodulated reflectivity are analyzed in terms of the band anticrossing model of the electronic structure of highly mismatched alloys. The results demonstrate the feasibility of using highly mismatched alloys to engineer the semiconductor energy band structure for specific device applications. © 2011 The American Physical Society.