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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Alberi, K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2010Electronic structure and lattice site location of Mn in III-Mn-V ferromagnetic semiconductorscitations
- 2008Composition dependence of the hole mobility in Ga Sbx As1-xcitations
- 2008Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAscitations
- 2005Fabrication of GaN xAs 1-x quantum structures by focused ion beam patterning
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article
Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs
Abstract
We have investigated the effect of partial isovalent anion substitution in Ga1-xMnxAs on electrical transport and ferromagnetism. Substitution of only 2.4% of As by P induces a metal-insulator transition at a constant Mn doping of x=0.046 while the replacement of 0.4% As with N results in the crossover from metal to insulator for x=0.037. This remarkable behavior is consistent with a scenario in which holes located within an impurity band are scattered by alloy disorder in the anion sublattice. The shorter mean free path of holes, which mediate ferromagnetism, reduces the Curie temperature TC from 113 to 60 K (100 to 65 K) upon the introduction of 3.1% P (1% N) into the As sublattice. © 2008 The American Physical Society.