| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Marty, Alain
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Light-driven Electrodynamics and Demagnetization in Fe$_n$GeTe$_2$ (n = 3, 5) Thin Films
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2023Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures
- 2023Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor depositioncitations
- 2023Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor depositioncitations
- 2022Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Control of spin-charge conversion in van der Waals heterostructurescitations
- 2021Control of spin–charge conversion in van der Waals heterostructurescitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Sicitations
- 2019Spin-dependent transport characterization in metallic lateral spin valves using one-dimensional and three-dimensional modelingcitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Sicitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperaturescitations
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2018Calculation method of spin accumulations and spin signals in nanostructures using spin resistorscitations
- 2017Imaging spin diffusion in germanium at room temperaturecitations
- 2016Spin Hall effect in AuW alloys
- 2014Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structurescitations
- 2014Electric-field assisted depinning and nucleation of magnetic domain walls in FePt/Al2O3/liquid gate structurescitations
- 2007Electric field-induced modification of magnetism in thin-film ferromagnetscitations
- 2006High-Curie-temperature ferromagnetism in self-organized GeMn nanocolumns
Places of action
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article
Spin-dependent transport characterization in metallic lateral spin valves using one-dimensional and three-dimensional modeling
Abstract
We present the analysis of the spin signals obtained in NiFe based metallic lateral spin valves. We exploit the spin dependent diffusive equations in both the conventional 1D analytic modeling as well as in 3D Finite Element Method simulations. Both approaches are used for extracting the spin diffusion length $l_{sf}^{N}$ and the effective spin polarization $P_{eff}$ in Py/Al, Py/Cu and Py/Au based lateral nano-structures at both $300\,K$ and $77\,K$. Both the analytic modeling and 3D Finite Element Method simulations give consistent results. Combination of both models provides a powerful tool for reliable spin transport characterization in all metallic spin valves and gives an insight into the spin/charge current and spin accumulations 3D distributions in these devices. We provide the necessary ingredients to develop the 3D finite element modeling of diffusive spin transport.