| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hamaya, Kohei
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Strain-induced specific orbital control in a Heusler alloy-based interfacial multiferroicscitations
- 2022Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSicitations
- 2022Giant converse magnetoelectric effect in a multiferroic heterostructure with polycrystalline Co2FeSicitations
- 2022Semiconductor spintronics with Co2-Heusler compoundscitations
- 2019Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contactscitations
- 2018Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devicescitations
- 2016Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111)citations
- 2016The antiphase boundary in half-metallic Heusler alloy Co2Fe(Al,Si):atomic structure, spin polarization reversal, and domain wall effectscitations
- 2016Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111):Co2FeSi0.5Al0.5/Ge(111)citations
- 2016The role of chemical structure on the magnetic and electronic properties of Co2FeAl0.5Si0.5/Si(111) interfacecitations
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article
Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices
Abstract
We show direct evidence for the impact of Heusler/semiconductor interfaces atomic structure on the spin transport signals in semiconductor-based lateral spin-valve (LSV) devices. Based on atomic scale Z-contrast scanning transmission electron microscopy and energy dispersive x-ray spectroscopy we show that atomic order/disorder of Co2FeAlSi (CFAS)/-Ge LSV devices is critical for the spin injection in Ge. By conducting a postannealing of the LSV devices, we find 90% decrease in the spin signal while there is no difference in the electrical properties of the CFAS /n-Ge contacts and in the spin diffusion length of the n-Ge layer. We show that the reduction in the spin signals after annealing is attributed to the presence of intermixing phases at the Heusler/semiconductor interface. First-principles calculations show how that intermixed interface region has drastically reduced spin polarization at the Fermi level, which is the main cause for the significant decrease of the spin signal in the annealed devices above 300 C.<br/><br/>