| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Marty, A.
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Topics
Publications (12/12 displayed)
- 2024An engineered enzyme embedded into PLA to make self-biodegradable plasticcitations
- 2024An engineered enzyme embedded into PLA to make self-biodegradable plastic.citations
- 2022Alloying two-dimensional VSe 2 with Pt: from a charge density wave state to a disordered insulatorcitations
- 2018Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperaturescitations
- 2018Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperaturescitations
- 2017Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impuritiescitations
- 2017Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impuritiescitations
- 2017Giant magnetoresistance in lateral metallic nanostructures for spintronic applicationscitations
- 2016Electrical detection of magnetic domain walls by inverse and direct spin Hall effectcitations
- 2012Voltage control of magnetism in ferromagnetic structures (Conference Paper)
- 2012Voltage control of magnetism in ferromagnetic structures (Conference Paper)
- 2010Effect of crystalline defects on domain wall motion under field and current in nanowires with perpendicular magnetization.citations
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article
Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures
Abstract
We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of E-g approximate to 2 eV. It drops to values about 5 x 10(3) Omega cm at T = 400 K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive (p type) at 5 cm(2) V-1 sec(-1) and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.