| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Beaulieu, Nathan
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Publications (7/7 displayed)
- 2021Enhancement of YIG|Pt spin conductance by local Joule annealingcitations
- 2020Enhancement of YIG$|$Pt spin conductance by local Joule annealing
- 2018Temperature Dependence of Magnetic Properties of an 18-nm-thick YIG Film Grown by Liquid Phase Epitaxy: Effect of a Pt Overlayercitations
- 2018Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperaturescitations
- 2017Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronicscitations
- 2016Driving mechanism for damping and g-factor in non-amorphous ferromagnetic CoFeZr ultrathin filmscitations
- 2013Electronic and magnetic properties under femtosecond laser excitation, from the Gd single crystal to the ferrimagnetic alloys
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article
Electrical properties of epitaxial yttrium iron garnet ultrathin films at high temperatures
Abstract
We report a study on the electrical properties of 19-nm-thick yttrium iron garnet (YIG) films grown by liquid phase epitaxy on gadolinium gallium garnet single crystal. The electrical conductivity and Hall coefficient are measured in the high-temperature range [300,400] K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band gap of E-g approximate to 2 eV. It drops to values about 5 x 10(3) Omega cm at T = 400 K, thus indicating that epitaxial YIG ultrathin films behave as large gap semiconductors. We also infer the Hall mobility, which is found to be positive (p type) at 5 cm(2) V-1 sec(-1) and almost independent of temperature. We discuss the consequence for nonlocal spin transport experiments performed on YIG at room temperature and demonstrate the existence of electrical offset voltages to be disentangled from pure spin effects.