| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chen, Yunzhong
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022On the thermoelectric properties of Nb-doped SrTiO3 epitaxial thin filmscitations
- 2022On the thermoelectric properties of Nb-doped SrTiO 3 epitaxial thin filmscitations
- 2019Diluted Oxide Interfaces with Tunable Ground Statescitations
- 2017Scavenging of oxygen vacancies at modulation-doped oxide interfaces: Evidence from oxygen isotope tracingcitations
- 2017Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopycitations
- 2016Effects of spark plasma sintering conditions on the anisotropic thermoelectric properties of bismuth antimony telluridecitations
- 2012On the origin of metallic conductivity at the interface of LaAlO3/SrTiO3citations
- 2012Resistance switching of the interfacial conductance in amorphous SrTiO3 heterostructures
- 2011Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser depositioncitations
- 2011Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructurescitations
- 2010Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition
Places of action
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article
Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy
Abstract
The spinel/perovskite heterointerface γ−Al2O3/SrTiO3 hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO3/SrTiO3by more than an order of magnitude, despite the abundance of oxygenvacancies which act as electron donors as well as scattering sites. Bymeans of resonant soft x-ray photoemission spectroscopy and <i>ab initio</i>calculations, we reveal the presence of a sharply localized type ofoxygen vacancies at the very interface due to the local breaking of theperovskite symmetry. We explain the extraordinarily high mobilities byreduced scattering resulting from the preferential formation ofinterfacial oxygen vacancies and spatial separation of the resulting2DES in deeper SrTiO3layers. Our findings comply with transport studies and pave the waytowards defect engineering at interfaces of oxides with differentcrystal structures.