| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Oehler, Fabrice
Centre for Nanoscience and Nanotechnology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Direct Reconstruction of the Band Diagram of Rhombohedral-Stacked Bilayer WSe 2 –Graphene Heterostructure via Photoemission Electron Microscopycitations
- 2024Stacking order and electronic band structure in MBE-grown trilayer WSe$_2$ filmscitations
- 2023Unidirectional Rashba spin splitting in single layer WS<sub>2(1−x)</sub>Se<sub>2x</sub> alloycitations
- 2023Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe 2 on GaP(111) Heterostructurecitations
- 2023Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluridecitations
- 2023Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloycitations
- 2023Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor depositioncitations
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloyscitations
- 2021Indirect to direct band gap crossover in two-dimensional WS 2(1-x) Se 2x alloys
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2016Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
- 2008Control of gold surface diffusion on Si nanowirescitations
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article
Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )
Abstract
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution x-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed, which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. The ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and −0.51eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV.