| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Collin, Stéphane
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2024Quantitative assessment of selenium diffusion and passivation in CdSeTe solar cells probed by spatially resolved cathodoluminescencecitations
- 2023Humidity‐Induced Degradation Processes of Halide Perovskites Unveiled by Correlative Analytical Electron Microscopycitations
- 2021Imaging CdCl 2 defect passivation and formation in polycrystalline CdTe films by cathodoluminescencecitations
- 2020Erbium-doped oxide for optical gain on hybrid silicon photonics platforms (Student Paper)
- 2020Backside light management of 4-terminal bifacial perovskite/silicon tandem PV modules evaluated under realistic conditionscitations
- 2019Development of reflective back contacts for high-efficiency ultrathin Cu(In,Ga)Se2 solar cellscitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Coupling Optical and Electrical Modelling for the study of a-Si:H-based nanowire Array Solar Cellscitations
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2016Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trappingcitations
- 2015Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes
- 2013Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowirescitations
- 2013Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowirescitations
- 2013Metal–dielectric bi-atomic structure for angular-tolerant spectral filteringcitations
- 20123D modeling of metamaterials at oblique incidence and effective analysis
- 20123D modeling of metamaterials at oblique incidence and effective analysis
- 2012Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cellscitations
- 2012Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cellscitations
Places of action
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article
Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )
Abstract
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution x-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed, which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. The ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and −0.51eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV.