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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Barjon, Julien
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Benchmarking the integration of hexagonal boron nitride crystals and thin films into graphene-based van der Waals heterostructurescitations
- 2023Vertical pin diodes on large freestanding (100) diamond film
- 2023Pseudo-delta phosphorus doped diamond
- 2020Heteroepitaxial growth of sp 2 -hybridized boron nitride multilayer on nickel substrates by CVD: the key role of the substrate orientationcitations
- 2020Production and processing of graphene and related materials
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materials
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2019Advanced synthesis of highly crystallized hexagonal boron nitride by coupling polymer-derived ceramics and spark plasma sintering processes—influence of the crystallization promoter and sintering temperaturecitations
- 2018Hybrid halide perovskites: a new semiconductor for photovoltaics and light emission
- 2017Angular resolved electron energy loss spectroscopy in hexagonal boron nitride
- 2017Angle-resolved electron energy loss spectroscopy in hexagonal boron nitridecitations
- 2017Surface effects on exciton diffusion in non polar ZnO/ZnMgO heterostructurescitations
- 2014Substitutional phosphorus incorporation in nanocrystalline CVD diamond thin filmscitations
- 2008Correlation Between Microstructure and Optical Properties of ZnO Based Nanostructures Grown by MOCVD
- 2008Stability of B-H and B-D complexes in diamond under electron beam excitationcitations
Places of action
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article
Angle-resolved electron energy loss spectroscopy in hexagonal boron nitride
Abstract
International audience ; Electron energy loss spectra were measured on hexagonal boron nitride single crystals employing an electron energy loss spectroscopic setup composed of an electron microscope equipped with a monochromator and an in-column filter. This setup provides high-quality energy-loss spectra and allows also for the imaging of energy-filtered diffraction patterns. These two acquisition modes provide complementary pieces of information, offering a global view of excitations in reciprocal space. As an example of the capabilities of the method we show how easily the core loss spectra at the K edges of boron and nitrogen can be measured and imaged. Low losses associated with interband and/or plasmon excitations are also measured. This energy range allows us to illustrate that our method provides results whose quality is comparable to that obtained from nonresonant x-ray inelastic scattering but with advantageous specificities such as an enhanced sensitivity at low q and a much greater simplicity and versatility that make it well adapted to the study of two-dimensional materials and related heterostructures. Finally, by comparing theoretical calculations to our measures, we are able to relate the range of applicability of ab initio calculations to the anisotropy of the sample and assess the level of approximation required for a proper simulation of our acquisition method.