| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Vergnaud, Céline
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2024Precision defect integrated graphene as reliable support membrane for high-resolution cryo-transmission electron microscopy
- 2024Two-dimensional to bulk crossover of the WSe2 electronic band structure
- 2022Phonon dynamics and thermal conductivity of PtSe2 thin films: Impact of crystallinity and film thickness on heat dissipation
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Control of spin–charge conversion in van der Waals heterostructurescitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe2 few-layers on SiO2/Sicitations
- 2019Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe$_2$ few-layers on SiO$_2$/Sicitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Toward efficient spin/charge conversion using topological insulator surface (Conference Presentation)
- 2017Imaging spin diffusion in germanium at room temperaturecitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2013Transition from spin accumulation into interface states to spin injection in silicon and germanium conduction bandscitations
- 2012Crossover from Spin Accumulation into Interface States to Spin Injection in the Germanium Conduction Bandcitations
Places of action
| Organizations | Location | People |
|---|
article
Imaging spin diffusion in germanium at room temperature
Abstract
We report on the nonlocal detection of optically oriented spins in lightly n-doped germanium at room temperature. Localized spin generation is achieved by scanning a circularly polarized laser beam (λ = 1550 nm) on an array of lithographically defined Pt microstructures. The in-plane oriented spin generated at the edges of such microstructures, placed at different distances from a spin-detection element, allows for a direct imaging of spin diffusion in the semiconductor, leading to a measured spin diffusion length of about 10 μm. Two different spin-detection blocks are employed, consisting of either a magnetic tunnel junction or a platinum stripe where the spin current is converted in an electrical signal by the inverse spin-Hall effect. The second solution represents the realization of a nonlocal spin-injection/detection scheme that is completely free from ferromagnetic functional blocks.