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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Jeangros, Quentin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Ion-induced field screening as a dominant factor in perovskite solar cell operational stabilitycitations
- 2024Pizza oven processing of organohalide perovskites (POPOP): a simple, versatile and efficient vapor deposition methodcitations
- 2024A Universal Perovskite/C60 Interface Modification via Atomic Layer Deposited Aluminum Oxide for Perovskite Solar Cells and Perovskite–Silicon Tandemscitations
- 2024Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal–halide perovskitescitations
- 2024Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal–halide perovskitescitations
- 2024A universal perovskite/C60 interface modification via atomic layer deposited aluminum oxide for perovskite solar cells and perovskite–silicon tandemscitations
- 2023Interface passivation for 31.25%-efficient perovskite/silicon tandem solar cellscitations
- 2021Multimodal Microscale Imaging of Textured Perovskite-Silicon Tandem Solar Cells.citations
- 2021Multimodal Microscale Imaging of Textured Perovskite-Silicon Tandem Solar Cells.
- 2021Vapor transport deposition of methylammonium iodide for perovskite solar cellscitations
- 2020Instability of p-i-n perovskite solar cells under reverse biascitations
- 2018Amorphous gallium oxide grown by low-temperature PECVDcitations
- 2018A passivating contact for silicon solar cells formed during a single firing thermal annealingcitations
- 2017Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivationcitations
- 2010In situ redox cycle of a nickel–YSZ fuel cell anode in an environmental transmission electron microscopecitations
- 2010In situ redox cycle of a nickel–YSZ fuel cell anode in an environmental transmission electron microscopecitations
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article
Enhancing the optoelectronic properties of amorphous zinc tin oxide by subgap defect passivation
Abstract
<p>The link between sub-bandgap states and optoelectronic properties is investigated for amorphous zinc tin oxide (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples were annealed up to 500 °C in oxidizing, neutral, and reducing atmospheres before characterizing their structural and optoelectronic properties by photothermal deflection spectroscopy, near-infrared-visible UV spectrophotometry, Hall effect, Rutherford backscattering, hydrogen forward scattering and transmission electron microscopy. By combining the experimental results with density functional theory calculations, oxygen deficiencies and resulting metal atoms clusters are identified as the source of subgap states, some of which act as electron donors but also as free electron scattering centers. The role of hydrogen on the optoelectronic properties is also discussed. Based on this detailed understanding of the different point defects present in a-ZTO, their impact on optoelectronic properties, and how they can be suppressed by postdeposition annealing treatments, an amorphous indium-free transparent conductive oxide, with a high thermal stability and an electron mobility up to 35cm2V-1s-1, is demonstrated by defect passivation.</p>