Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (2/2 displayed)

  • 2017Signature of surface state coupling in thin films of the topological Kondo insulator SmB6 from anisotropic magnetoresistance14citations
  • 2015Thickness dependent charge transport in ferroelectric BaTiO3 heterojunctionscitations

Places of action

Chart of shared publication
Petrushevsky, M. Shaviv
1 / 1 shared
Levi, G.
1 / 4 shared
Dogra, Anjana
1 / 3 shared
Singh, Manju
1 / 3 shared
Rakshit, R. K.
1 / 2 shared
Chart of publication period
2017
2015

Co-Authors (by relevance)

  • Petrushevsky, M. Shaviv
  • Levi, G.
  • Dogra, Anjana
  • Singh, Manju
  • Rakshit, R. K.
OrganizationsLocationPeople

article

Signature of surface state coupling in thin films of the topological Kondo insulator SmB6 from anisotropic magnetoresistance

  • Petrushevsky, M. Shaviv
  • Rout, P. K.
  • Levi, G.
Abstract

<p>The temperature and thickness dependencies of the in-plane anisotropic magnetoresistance (AMR) of SmB6 thin films are reported. We find that the AMR changes sign from negative (ρ||&lt;ρ¥) at high temperatures to positive (ρ||&gt;ρ¥) at low temperatures. The temperature, Ts, at which this sign change occurs, decreases with increasing film thickness t and Ts vanishes for t&gt; 30 nm. We interpret our results in the framework of a competition between two components: a negative bulk contribution and a positive surface AMR.</p>

Topics
  • surface
  • thin film
  • anisotropic