| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Arras, Rémi
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022Multiple spintronic functionalities into single zinc-ferrous ferrite thin filmscitations
- 2021Nanostructured ZnFe2O4: An Exotic Energy Materialcitations
- 2018Noble Metal Nanocluster Formation in Epitaxial Perovskite Thin Filmscitations
- 2017Evolution of magnetic properties and damping coefficient of Co 2 MnSi Heusler alloy with Mn/Si and Co/Mn atomic disordercitations
- 2017Charge transfer and magnetization of a MoS 2 monolayer at the Co(0001)/MoS 2 interface
- 2017Strain induced atomic structure at the Ir-doped LaAlO 3 /SrTiO 3 interfacecitations
- 2017Electronic structure of the Co(0001)/MoS2 interface, and its possible use for electrical spin injection in a single MoS2 layercitations
- 2016First-principles electronic structure calculations for the whole spinel oxide solid solution range MnxCo3−xO4(0 ≤ x ≤ 3) and their comparison with experimental datacitations
- 2016First-principles electronic structure calculations for the whole spinel oxide solid solution range MnxCo3−xO4(0 ≤ x ≤ 3) and their comparison with experimental datacitations
- 2016First-principles electronic structure calculations for the whole spinel oxide solid solution range MnxCo3−xO4(0 ≤ x ≤ 3) and their comparison with experimental datacitations
- 2015Observation of the strain induced magnetic phase segregation in manganite thin filmscitations
- 2015Observation of the strain induced magnetic phase segregation in manganite thin filmscitations
- 2015Energy-loss magnetic chiral dichroism study of epitaxial MnAs film on GaAs(001)citations
- 2010Electronic structure near an antiphase boundary in magnetitecitations
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article
Electronic structure of the Co(0001)/MoS2 interface, and its possible use for electrical spin injection in a single MoS2 layer
Abstract
The ability to perform efficient electrical spin injection from ferromagnetic metals into two-dimensional semiconductor crystals based on transition metal dichalcogenide monolayers is a prerequisite for spintronic and valleytronic devices using these materials. Here, the hcp Co(0001)/MoS2 interface electronic structure is investigated by first-principles calculations based on the density functional theory. In the lowest energy configuration of the hybrid system after optimization of the atomic coordinates, we show that interface sulfur atoms are covalently bound to one, two or three cobalt atoms. A decrease of the Co atom spin magnetic moment is observed at the interface, together with a small magnetization of S atoms. Mo atoms also hold small magnetic moments which can take positive as well as negative values. The charge transfers due to covalent bonding between S and Co atoms at the interface have been calculated for majority and minority spin electrons and the connections between these interface charge transfers and the induced magnetic properties of the MoS2 layer are discussed. Band structure and density of states of the hybrid system are calculated for minority and majority spin electrons, taking into account spin-orbit coupling. We demonstrate that MoS2 bound to the Co contact becomes metallic due to hybridization between Co d and S p orbitals. For this metallic phase of MoS2, a spin polarization at the Fermi level of 16 % in absolute value is calculated, that could allow spin injection into the semiconducting MoS2 monolayer channel. Finally, the symmetry of the majority and minority spin electron wave functions at the Fermi level in the Co-bound metallic phase of MoS2 and the orientation of the border between the metallic and semiconducting phases of MoS2 are investigated, and their impact on spin injection into the MoS2 channel is discussed.