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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Akola, Jaakko
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2024Deposited PtGe clusters as active and durable catalysts for CO oxidationcitations
- 2024Graphite nucleation on (Al, Si, Mg)-nitrides : Elucidating the chemical interactions and turbostratic structures in spheroidal graphite cast ironscitations
- 2024Graphite nucleation on (Al, Si, Mg)-nitridescitations
- 2023Machine-learned model Hamiltonian and strength of spin-orbit interaction in strained Mg2X (X = Si, Ge, Sn, Pb)citations
- 2022Machine-learned model Hamiltonian and strength of spin-orbit interaction in strained Mg2X (X = Si, Ge, Sn, Pb)citations
- 2021Comparison of optical response from DFT random phase approximation and a low-energy effective modelcitations
- 2021Comparison of optical response from DFT random phase approximation and a low-energy effective model : Strained phosphorenecitations
- 2020Density functional simulations of pressurized Mg-Zn and Al-Zn alloyscitations
- 2020Strain-engineered widely tunable perfect absorption angle in black phosphorus from first principlescitations
- 2020Synergistic Computational-Experimental Discovery of Highly Selective PtCu Nanocluster Catalysts for Acetylene Semihydrogenationcitations
- 2020Atomistic simulations of early stage clusters in AlMg alloyscitations
- 2019Highly ductile amorphous oxide at room temperature and high strain ratecitations
- 2019Highly ductile amorphous oxide at room temperature and high strain ratecitations
- 2019Ultrahigh-pressure form of Si O2 glass with dense pyrite-type crystalline homologycitations
- 2019Atomistic simulations of early stage clusters in Al–Mg alloyscitations
- 2018Atomistic simulations of early stage clusters in AlMg alloyscitations
- 2016Tuning electronic properties of graphene heterostructures by amorphous-to-crystalline phase transitionscitations
- 2015Structure of amorphous Ag/Ge/S alloys: experimentally constrained density functional studycitations
- 2015The Prototype Phase Change Material Ge2Sb2Te5citations
- 2003Close packing of clusterscitations
- 2001Metallic evolution of small magnesium clusters
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article
Tuning electronic properties of graphene heterostructures by amorphous-to-crystalline phase transitions
Abstract
The remarkable ability of phase change materials (PCM) to switch between amorphous and crystalline states on a nanosecond time scale could provide new opportunities for graphene engineering. We have used density functional calculations to investigate the structures and electronic properties of heterostructures of thin amorphous and crystalline films of the PCM GeTe (16 Å thick) and Ge2Sb2Te5 (20 Å) between graphene layers. The interaction between graphene and PCM is very weak, charge transfer is negligible, and the structures of the chalcogenide films differ little from those of bulk phases. A crystalline GeTe (111) layer induces a band gap opening of 80 meV at the Dirac point. This effect is absent for the amorphous film, but the Fermi energy shifts down along the Dirac cone by −60 meV. Ge2Sb2Te5 shows similar features, although inherent disorder in the crystalline rocksalt structure reduces the contrast in band structure from that in the amorphous structure. These features originate in charge polarization within the crystalline films, which show electromechanical response (piezoelectricity) upon compression, and show that the electronic properties of graphene structures can be tuned by inducing ultrafast structural transitions within the chalcogenide layers. Graphene can also be used to manipulate the structural state of the PCM layer and its electronic and optical properties.