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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Power, Stephen
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Topics
Publications (6/6 displayed)
- 2015Graphene on graphene antidot latticescitations
- 2015Graphene on graphene antidot lattices:Electronic and transport propertiescitations
- 2015Strain-modified RKKY interaction in carbon nanotubescitations
- 2014RKKY interaction between extended magnetic defect lines in graphenecitations
- 2014RKKY interaction between extended magnetic defect lines in graphene
- 2009Emergence of local magnetic moments in doped graphene-related materialscitations
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article
Graphene on graphene antidot lattices
Abstract
Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band-structure engineering can be performed to obtain linearly dispersing bands (with a high concomitant mobility), which nevertheless can be made gapped with a perpendicular field. We analyze the electronic structure and transport properties of various types of GOALs, and draw general conclusions about their properties to aid their design in experiments.