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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Afra, B.
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Publications (6/6 displayed)
- 2013Latent ion tracks in amorphous siliconcitations
- 2013Latent ion tracks in amorphous siliconcitations
- 2013Tracks and voids in amorphous Ge induced by swift heavy-ion irradiationcitations
- 2012Morphology of swift heavy ion tracks in metallic glassescitations
- 2012Morphology of swift heavy ion tracks in metallic glassescitations
- 2012Modification of Fe-B based metallic glasses using swift heavy ions
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article
Latent ion tracks in amorphous silicon
Abstract
<p>We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.</p>