| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lähnemann, Jonas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022Molecular beam epitaxy of single-crystalline bixbyite (In<SUB>1<SUB>−x</SUB>Ga<SUB>x</SUB> ) 2</SUB>O<SUB>3</SUB> films (x ≤0.18 ): Structural properties and consequences of compositional inhomogeneitycitations
- 2021Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)<SUB>2</SUB>O<SUB>3</SUB> alloy filmscitations
- 2020Beam damage of single semiconductor nanowires during X-ray nano beam diffraction experimentscitations
- 2020Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)citations
- 2014Luminescence associated with stacking faults in GaNcitations
- 2014Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiencycitations
- 2013Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayerscitations
- 2012Optical switching and related structural properties of epitaxial Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> filmscitations
- 2012Direct experimental determination of the spontaneous polarization of GaNcitations
- 2011Self-assisted nucleation and vapor-solid growth of InAs nanowires on bare Si (111)citations
- 2010GaN and ZnO nanostructurescitations
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article
Direct experimental determination of the spontaneous polarization of GaN
Abstract
We present a universal approach for determining the spontaneous polarization P<SUB>sp</SUB> of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in these crystals. Employing microphotoluminescence and cathodoluminescence spectroscopy, we observe emission lines from the intrinsic and extrinsic stacking faults in strain-free GaN microcrystals. By treating the polarization sheet charges associated with these stacking faults as a plate capacitor, P<SUB>sp</SUB> can be obtained from the observed transition energies with no additional assumptions. Self-consistent Poisson-Schrödinger calculations, aided by the microscopic electrostatic potential computed using density-functional theory, lead to nearly identical values for P<SUB>sp</SUB>. Our recommended value for P<SUB>sp</SUB> of GaN is -0.022±0.007 C/m<SUP>2</SUP>....