• Lany, S.
• Ginley, D. S.
• Perkins, J. D.
• Ndione, P. F.
• Paudel, T. R.
• Zunger, A.
• Zakutayev, A.

Abstract

We explore the effects of cation off-stoichiometry on structural, electrical, optical, and electronic properties of Co{sub 2}ZnO{sub 4} normal spinel and Co{sub 2}NiO{sub 4} inverse spinel using theoretic and experimental (combinatorial and conventional) techniques, both at thermodynamic equilibrium and in the metastable regime. Theory predicts that nonequilibrium substitution of divalent Zn on nominally trivalent octahedral sites increases net hole density in Co{sub 2}ZnO{sub 4}. Experiment confirms high conductivity and high work function in Co{sub 2}NiO{sub 4} and Zn-rich Co{sub 2}ZnO{sub 4} thin films grown by nonequilibrium physical vapor deposition techniques. High p-type conductivities of Co{sub 2}ZnO{sub 4} (up to 5 S/cm) and Co{sub 2}NiO{sub 4} (up to 204 S/cm) are found over a broad compositional range, they are only weakly sensitive to oxygen partial pressure and quite tolerant to a wide range of processing temperatures. In addition, off-stoichiometry caused by nonequilibrium growth decreases the optical absorption of Co{sub 2}ZnO{sub 4} and Co{sub 2}NiO{sub 4} thin films, although the 500-nm thin films still have rather limited transparency. All these properties as well as high work functions make Co{sub 2}ZnO{sub 4} and Co{sub 2}NiO{sub 4} thin films attractive for technological applications, such as hole transport layers in organic photovoltaic devices or p-type buffer layers in inorganic solar cells.

Topics

• density
• theory
• experiment
• thin film
• Oxygen
• physical vapor deposition