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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kovács, András
Forschungszentrum Jülich
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2023Current-driven writing process in antiferromagnetic Mn2Au for memory applicationscitations
- 2023Large Interfacial Rashba Interaction Generating Strong Spin–Orbit Torques in Atomically Thin Metallic Heterostructurescitations
- 2023Large interfacial Rashba interaction and resultant dominating field- like torque in atomically thin metallic heterostructurescitations
- 2023Role of heterophase interfaces on local coercivity mechanisms in the magnetic Al0.3CoFeNi complex concentrated alloycitations
- 2022Microstructure and Properties after Friction Stir Processing of Twin-Roll Cast Al–Mn–Cu–Be Alloycitations
- 2021Readout of an antiferromagnetic spintronics system by strong exchange coupling of Mn2Au and Permalloycitations
- 2020Unconventional magnetization textures and domain-wall pinning in Sm–Co magnetscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Electron holographycitations
- 2017Control of morphology and formation of highly geometrically confined magnetic skyrmionscitations
- 2015Electrostatic doping as a source for robust ferromagnetism at the interface between antiferromagnetic cobalt oxidescitations
- 2011Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn contentcitations
- 2011Amorphous Fe-B alloys in B-Fe-Ag multilayers studied by magnetization and Mössbauer measurementscitations
- 2011Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopycitations
- 2010Mapping boron in silicon solar cells using electron energy-loss spectroscopy
- 2010Mapping boron in silicon solar cells using electron energy-loss spectroscopy
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article
Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content
Abstract
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate-temperature (400°C) and high-temperature (560°C and 630°C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1% and 2%, grown by molecular beam epitaxy at 270°C. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400°C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn,Ga)As nanocrystals, with similar diameters of 7-10 nm, are observed to coexist in layers with an initial Mn content of 0.5% and 2% after higher-temperature annealing. Measurements of magnetization relaxation in the time span 0.1-10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals, as well as for the absence of spin-glass dynamics. These findings point to weak coupling between nanocrystals even in layers with the highest nanocrystal density.