Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (4/4 displayed)

  • 20242D electron gas formation on InAs wurtzite nanosheet surfaces1citations
  • 2022Nanometric moiré stripes on the surface of Bi2Se3 topological insulator8citations
  • 2010Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys39citations
  • 2010Direct measurement and analysis of the conduction band density of states in diluted GaAs 1-x N x alloys39citations

Places of action

Chart of shared publication
Hofmann, Ph
1 / 2 shared
Benter, S.
1 / 1 shared
Bianchi, M.
1 / 15 shared
Xu, H. Q.
1 / 2 shared
Pan, D.
1 / 3 shared
Zhao, J.
1 / 34 shared
Mikkelsen, A.
2 / 12 shared
D., Crescenzi M.
1 / 1 shared
Salvato, M.
1 / 6 shared
Nahas, S.
1 / 1 shared
Lombardi, F.
1 / 13 shared
Castrucci, P.
1 / 6 shared
M., Caruso G.
1 / 1 shared
Black-Schaffer, A.
1 / 1 shared
Liu, Y.
1 / 99 shared
Kunakova, G.
1 / 2 shared
Boninelli, S.
1 / 5 shared
Andzane, J.
1 / 2 shared
Bauch, T.
1 / 4 shared
Erts, D.
1 / 3 shared
Scagliotti, M.
1 / 1 shared
Ivanova, L.
2 / 2 shared
Ebert, Ph
2 / 3 shared
Lenz, A.
2 / 2 shared
Vaughan, Martin
1 / 3 shared
Riechert, H.
2 / 11 shared
Dähne, M.
2 / 3 shared
Geelhaar, L.
2 / 13 shared
Eisele, H.
2 / 2 shared
Oreilly, E. P.
2 / 6 shared
Fahy, S.
2 / 4 shared
Schumann, O.
2 / 2 shared
Vaughan, M. P.
1 / 2 shared
Chart of publication period
2024
2022
2010

Co-Authors (by relevance)

  • Hofmann, Ph
  • Benter, S.
  • Bianchi, M.
  • Xu, H. Q.
  • Pan, D.
  • Zhao, J.
  • Mikkelsen, A.
  • D., Crescenzi M.
  • Salvato, M.
  • Nahas, S.
  • Lombardi, F.
  • Castrucci, P.
  • M., Caruso G.
  • Black-Schaffer, A.
  • Liu, Y.
  • Kunakova, G.
  • Boninelli, S.
  • Andzane, J.
  • Bauch, T.
  • Erts, D.
  • Scagliotti, M.
  • Ivanova, L.
  • Ebert, Ph
  • Lenz, A.
  • Vaughan, Martin
  • Riechert, H.
  • Dähne, M.
  • Geelhaar, L.
  • Eisele, H.
  • Oreilly, E. P.
  • Fahy, S.
  • Schumann, O.
  • Vaughan, M. P.
OrganizationsLocationPeople

article

Direct measurement and analysis of the conduction band density of states in diluted GaAs1-xNx alloys

  • Ivanova, L.
  • Ebert, Ph
  • Lenz, A.
  • Timm, R.
  • Vaughan, Martin
  • Riechert, H.
  • Dähne, M.
  • Geelhaar, L.
  • Eisele, H.
  • Oreilly, E. P.
  • Fahy, S.
  • Schumann, O.
Abstract

<p>We use scanning tunneling spectroscopy to show directly that the conduction band density of states (DOS) of GaAs<sub>1-x</sub>N<sub>x</sub> with low nitrogen (N) content x is enhanced about 0.5 eV above the band edge, followed by a decrease at higher energy. The structure of the measured DOS is in excellent agreement with calculations based on a Green's-function formalism taking into account different N environments. This analysis highlights the inclusion of N-N pairs and the validity of the Green's-function approach to describe the band structure of dilute nitride and related extreme semiconductor alloys.</p>

Topics
  • density
  • impedance spectroscopy
  • inclusion
  • semiconductor
  • Nitrogen
  • nitride
  • band structure