• Ridgway, M. C.
• Schnohr, C. S.
• Byrne, A. P.
• Giulian, R.
• Cookson, D. J.
• Llewellyn, D. J.

Abstract

<p>Damage formation in InP, GaP, InAs, GaAs, and the related ternary alloys Ga0.50 In0.50 P and Ga0.47 In0.53 As irradiated at room temperature with 185 MeV Au ions was studied using Rutherford backscattering spectroscopy in channeling configuration, transmission electron microscopy, and small-angle x-ray scattering. Despite nearly identical ion-energy loss in these materials, their behavior under swift-heavy-ion irradiation is strikingly different: InP and Ga0.50 In0.50 P are readily amorphized, GaP and GaAs remain almost undamaged and InAs and Ga0.47 In0.53 As exhibit intermediate behavior. A material-dependent combination of irradiation-induced damage formation and annealing is proposed to describe the different responses of the III-V materials to electronic energy loss.</p>

Topics

• impedance spectroscopy
• semiconductor
• transmission electron microscopy
• annealing
• X-ray scattering