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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Watson, Ian
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2020Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate
- 2017Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodescitations
- 2017The impact of biomass feedstock composition and pre-treatments on tar formation during biomass gasification
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2012Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameterscitations
- 2010Al1-xInxN/GaN bilayers: Structure, morphology, and optical propertiescitations
- 2009Free-standing light-emitting organic nanocomposite membranes
- 2009White light emission via cascade Förster energy transfer in (Ga, In)N quantum well/polymer blend hybrid structurescitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2006Hybrid inorganic/organic semiconductor heterostructures with efficient non-radiative energy transfercitations
- 2003Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
- 2003Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
- 2003Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells
- 2002GaN microcavities formed by laser lift-off and plasma etchingcitations
- 2002Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixingcitations
- 2002Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mappingcitations
- 2001Probing bulk and surface damage in widegap semiconductorscitations
- 2001InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching
Places of action
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article
Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition range
Abstract
Photoluminescence (PL) and PL excitation (PLE) spectra of Eu-implanted AlxGa1-xN are obtained across the whole alloy composition range. The dominant D-5(0)-F-7(2) emission band broadens and then narrows as x increases from 0 to 1 while the peak shifts monotonically. This behavior is surprisingly similar to the broadening of excitons in a semiconductor alloy caused by composition fluctuations [E. F. Schubert et al., Phys. Rev. B 30, 813 (1984). PLE spectra reveal a steplike AlxGa1-xN band-edge absorption and two "subgap" bands X-1,X-2:X-1 peaks at 3.26 eV in GaN and shifts linearly to 3.54 eV in AlN. For x > 0.6, X-2 emerges approximately 1 eV higher in energy than X-1 and shifts in a similar way. We propose that X-1,X-2 involve creation of core-excitonic complexes of Eu emitting centers.