Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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1.080 Topics available

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977 Locations available

693.932 PEOPLE
693.932 People People

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Show results for 693.932 people that are selected by your search filters.

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Naji, M.
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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (5/5 displayed)

  • 2017X-ray emission measurements following charge exchange between O8<SUP>+</SUP> and Krcitations
  • 2016Fabrication of Superconducting Mo/Cu Bilayers Using Ion-Beam-Assisted e-Beam Evaporation11citations
  • 2008Microcalorimeter Instruments for the Spectrum-R(X)G and NeXT Missions4citations
  • 2007Hot-electron effects in strongly localized doped silicon at low temperature10citations
  • 2001Spectra of the 1/4 keV X-Ray Diffuse Background from the Diffuse X-Ray Spectrometer Experiment52citations

Places of action

Chart of shared publication
Stancil, P. C.
1 / 2 shared
Wulf, D.
1 / 1 shared
Andrianarijaona, V. M.
1 / 4 shared
Fogle, M.
1 / 4 shared
Havener, C. C.
1 / 5 shared
Seely, D. G.
1 / 5 shared
Zhang, R. T.
1 / 2 shared
Morgan, Kelsey M.
1 / 1 shared
Kripps, Kari L.
1 / 1 shared
Jaeckel, Felix T.
1 / 1 shared
Zhang, Shuo
1 / 4 shared
Ohashi, Takaya
1 / 3 shared
Den Herder, Jan-Willem
1 / 3 shared
Mitsuda, Kazuhisa
1 / 2 shared
Kelley, Richard
1 / 1 shared
Liu, D.
1 / 37 shared
Szymkowiak, A. E.
1 / 1 shared
Porter, F. S.
1 / 1 shared
Stahle, C. M.
1 / 1 shared
Kelley, R. L.
1 / 1 shared
Kilbourne, C. A.
1 / 1 shared
Galeazzi, M.
1 / 1 shared
Rocks, L. E.
1 / 1 shared
Gygax, J. D.
1 / 1 shared
Smith, B.
1 / 1 shared
Vaillancourt, J. E.
1 / 1 shared
Tan, P.
1 / 2 shared
Brekosky, R. P.
1 / 1 shared
Sanders, W. T.
2 / 2 shared
Boyce, K. R.
1 / 1 shared
Edgar, Richard J.
1 / 1 shared
Kraushaar, W. L.
1 / 1 shared
Morgenthaler, J. P.
1 / 1 shared
Chart of publication period
2017
2016
2008
2007
2001

Co-Authors (by relevance)

  • Stancil, P. C.
  • Wulf, D.
  • Andrianarijaona, V. M.
  • Fogle, M.
  • Havener, C. C.
  • Seely, D. G.
  • Zhang, R. T.
  • Morgan, Kelsey M.
  • Kripps, Kari L.
  • Jaeckel, Felix T.
  • Zhang, Shuo
  • Ohashi, Takaya
  • Den Herder, Jan-Willem
  • Mitsuda, Kazuhisa
  • Kelley, Richard
  • Liu, D.
  • Szymkowiak, A. E.
  • Porter, F. S.
  • Stahle, C. M.
  • Kelley, R. L.
  • Kilbourne, C. A.
  • Galeazzi, M.
  • Rocks, L. E.
  • Gygax, J. D.
  • Smith, B.
  • Vaillancourt, J. E.
  • Tan, P.
  • Brekosky, R. P.
  • Sanders, W. T.
  • Boyce, K. R.
  • Edgar, Richard J.
  • Kraushaar, W. L.
  • Morgenthaler, J. P.
OrganizationsLocationPeople

article

Hot-electron effects in strongly localized doped silicon at low temperature

  • Liu, D.
  • Szymkowiak, A. E.
  • Mccammon, Dan
  • Porter, F. S.
  • Stahle, C. M.
  • Kelley, R. L.
  • Kilbourne, C. A.
  • Galeazzi, M.
  • Rocks, L. E.
  • Gygax, J. D.
  • Smith, B.
  • Vaillancourt, J. E.
  • Tan, P.
  • Brekosky, R. P.
  • Sanders, W. T.
  • Boyce, K. R.
Abstract

The electrical conductivity in doped semiconductors in the strongly localized variable range hopping regime is currently explained as phonon-assisted electron hopping. While investigating the non-Ohmic behavior of doped silicon at temperatures of 0.05-1K , we found strong evidence for the existence of separate temperatures for the electron and phonon systems analogous to the hot-electron effect in metals. This behavior cannot easily be explained by phonon-assisted hopping and seems to favor instead a direct electron-electron interaction at low temperature. A hot-electron model makes definite predictions for the dependence of the electrical conductivity on the bias power, the frequency dependence of the resistance nonlinearities, and for an additional noise term. We have made a systematic investigation of these quantities, and find all of them in good agreement with the model predictions over a wide range of parameters....

Topics
  • impedance spectroscopy
  • semiconductor
  • Silicon
  • electrical conductivity