| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Migliorato, Max A.
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2014A review of non linear piezoelectricity in semiconductorscitations
- 2013Non-linear piezoelectricity in wurtzite ZnO semiconductorscitations
- 2013Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductorscitations
- 2012Non linear piezoelectricity in zincblende GaAs and InAs semiconductors
- 2012Importance of non linear piezoelectric effect inWurtzite III-N semiconductorscitations
- 2011Second-order piezoelectricity in wurtzite III-N semiconductorscitations
- 2011Erratum:Second-order piezoelectricity in wurtzite III-N semiconductors (Physical Review B (2011) 84 (085211))citations
- 2011Investigating the effect of non linear piezoelectricity on the excitonic properties of III-N semiconductor quantum dots
- 2007Optimized Tersoff potential parameters for tetrahedrally bonded III-V semiconductorscitations
- 2004Influence of composition on the piezoelectric effect and on the conduction band energy levels of inxGa1-xAs/GaAs quantum dotscitations
Places of action
| Organizations | Location | People |
|---|
article
Optimized Tersoff potential parameters for tetrahedrally bonded III-V semiconductors
Abstract
We address the issue of accurate parametrization for the Abell-Tersoff empirical potential applied to tetrahedrally bonded semiconductor materials. Empirical potential methods for structural relaxation are widely used for group IV semiconductors while, with few notable exceptions, work on III-V materials has not been extensive. In the case of the Abell-Tersoff potential parametrizations exist only for III-As and III-N, and are designed to correctly predict only a limited number of cohesive and elastic properties. In this work we show how by fitting to a larger set of cohesive and elastic properties calculated from density functional theory, we are able to obtain parameters for III-As, III-N, III-P, and III-Sb zinc blende semiconductors, which can also correctly predict important nonlinear effects in the strain. © 2007 The American Physical Society.