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Publications (7/7 displayed)
- 2024Determining by Raman spectroscopy the average thickness and N -layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot sizecitations
- 2024Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2citations
- 2022Synthesis of a polyphenylacetylene/silica nanotube composite under high-temperature, high-pressure conditionscitations
- 2021High-Pressure Synthesis and Gas-Sensing Tests of 1-D Polymer/Aluminophosphate Nanocompositescitations
- 2021High-Pressure Synthesis and Gas-Sensing Tests of 1-D Polymer/Aluminophosphate Nanocompositescitations
- 2016High temperature electrical transport study of Si-doped AlNcitations
- 2006Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiCcitations
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article
Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC
Abstract
The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10-700 K for nitrogen concentrations between 3.5x10(15) and 5x10(19) cm(-3). For the highest doped samples, a good agreement is found between the experimental resistivity and the values calculated from a generalized Drude approach at similar dopant concentration and temperature. From these results, the critical concentration (N-c) of nitrogen impurities which corresponds to the metal-nonmetal transition in 4H-SiC is deduced. We find N-c similar to 10(19) cm(-3).