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Topics
Publications (17/17 displayed)
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2023The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures
- 2021Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
- 2021Thermally propagated Al contacts on SiGe nanowires characterized by electron beam induced current in a scanning transmission electron microscope
- 2020Wurtzite quantum well structures under high pressurecitations
- 2018Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputteringcitations
- 2018Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer
- 2013Two-step method for the deposition of AlN by radio frequency sputteringcitations
- 2013Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cellscitations
- 2012Carrier localization in InN/InGaN multiple-quantum wells with high In-contentcitations
- 2010The microstructure and properties of InN layers
- 2010Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N
- 2010Extended defects in semipolar (1122) gallium nitride
- 2010Extended defects in semipolar (1122) gallium nitride
- 2009Strain relaxation in short-period polar GaN/AIN superlatticescitations
- 2008Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties
- 2006Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductorcitations
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article
Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor
Abstract
Intrinsic ferromagnetism in high quality wurtzite Ga0:937Mn0:063N semiconductor is unambigu- ously demonstrated by both macroscopic magnetization measurements and x-ray magnetic circular dichroism. The structural quality of the samples grown by plasma-assisted molecular beam epitaxy is confirmed by x-ray di®raction and x-ray linear dichroism. The Curie temperature of a (Ga,Mn)N sample with 6.3 % Mn is 8 K with a spontaneous magnetic moment of 2.4 Bohr magneton per Mn at 2 K.