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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Adelmann, C.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2017Thickness dependence of the resistivity of platinum-group metal thin filmscitations
- 2010Strontium niobate high-k dielectrics: Film deposition and material propertiescitations
- 2010Atomic Layer Deposition of Gd-Doped HfO2 Thin Filmscitations
- 2009Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions
- 2009Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopycitations
- 2009Alternative high-k dielectrics for semiconductor applicationscitations
- 2008Aqueous solution-gel preparation of ultrathin ZrO2 films for gate dielectric applicationcitations
- 2006Epitaxial growth and characterization of single crystal ferromagnetic shape memory Co2NiGa filmscitations
- 2006Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devicescitations
- 2005Electron Spin Dynamics and Hyperfine Interactions in Fe/Al_0.1Ga_0.9As/GaAs Spin Injection Heterostructurescitations
- 2004Spin injection from the Heusler alloy Co_2MnGe into Al_0.1Ga_0.9As/GaAs heterostructurescitations
- 2001Growth and characterization of self-assembled cubic quantum dotscitations
- 2001Strain relaxation in (0001)AlN/GaN heterostructurescitations
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document
Electron Spin Dynamics and Hyperfine Interactions in Fe/Al_0.1Ga_0.9As/GaAs Spin Injection Heterostructures
Abstract
We have studied hyperfine interactions between spin-polarized electrons and lattice nuclei in Al_0.1Ga_0.9As/GaAs quantum well (QW) heterostructures. The spin-polarized electrons are electrically injected into the semiconductor heterostructure from a metallic ferromagnet across a Schottky tunnel barrier. The spin-polarized electron current dynamically polarizes the nuclei in the QW, and the polarized nuclei in turn alter the electron spin dynamics. The steady-state electron spin is detected via the circular polarization of the emitted electroluminescence. The nuclear polarization and electron spin dynamics are accurately modeled using the formalism of optical orientation in GaAs. The nuclear spin polarization in the QW is found to depend strongly on the electron spin polarization in the QW, but only weakly on the electron density in the QW. We are able to observe nuclear magnetic resonance (NMR) at low applied magnetic fields on the order of a few hundred Oe by electrically modulating the spin injected into the QW. The electrically driven NMR demonstrates explicitly the existence of a Knight field felt by the nuclei due to the electron spin. ; Comment: 19 Figures - submitted to PRB