• Wesch, W.
• Nylandsted-Larsen, A.
• Ridgway, M. C.
• Glover, C. J.
• Foran, G. J.
• Hansen, J.
• Miller, R.
• Azevedo, G. De M.
• Llewellyn, D. J.

Abstract

<p>Extended x-ray absorption fine structure (EXAFS) measurements have been used to characterize the ion-irradiation-induced crystalline-to-amorphous phase transformation in Ge nanocrystals. The atomic-scale structure of Ge nanocrystals in a silica matrix is first shown to deviate from that of bulk crystalline material with an increase in both Gaussian and non-Gaussian forms of structural disorder. The magnitude of the disorder in the bond-length distribution is comparable to that of relaxed amorphous Ge. The amorphization of such nanocrystals is then demonstrated at an ion dose ∼100 times less than that required for bulk crystalline material irradiated simultaneously. Specifically, Ge nanocrystals irradiated at -196 °C are rendered amorphous at ∼0.01 displacements per atom. Finally, we show the atomic-scale structure of amorphized nanocrystals and bulk amorphous material is comparable. The rapid amorphization of Ge nanocrystals is potentially the result of several factors including (i) the preferential nucleation of the amorphous phase at the nanocrystal/matrix interface, (ii) the preirradiation, higher-energy structural state of the nanocrystals themselves, (iii) an enhanced vacancy concentration within the nanocrystals due to inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix, and (iv) ion-beam mixing and the subsequent increase in nanocrystal impurity concentrations.</p>

Topics

• impedance spectroscopy
• amorphous
• phase
• laser emission spectroscopy
• interstitial
• vacancy
• extended X-ray absorption fine structure spectroscopy
• impurity concentration