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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Koenraad, Pm Paul
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2022Control of morphology and substrate etching in InAs/InP droplet epitaxy quantum dots for single and entangled photon emitterscitations
- 2022Study of Size, Shape, and Etch pit formation in InAs/InP Droplet Epitaxy Quantum Dotscitations
- 2021Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dotscitations
- 2018Micro and nanoscale characterization of complex multilayer-structured white etching layer in railscitations
- 2018Martensite crystallography and chemistry in dual phase and fully martensitic steelscitations
- 2017Atomic layer deposition of in 2 O 3 :H from InCp and H 2 O/O 2 : Microstructure and isotope labeling studiescitations
- 2012Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealingcitations
- 2005Relaxation of a strained quantum well at a cleaved surface. Part II: effect of cubic symmetrycitations
- 2005Atomic-scale structure and photoluminescence of InAs quantum dots in GaAs and AlAscitations
- 2004Scanning tunneling spectroscopy on organic semiconductors : experiment and modelcitations
- 2003Scanning-tunneling spectroscopy on conjugated polymer films
- 2002Relaxation of a strained quantum well at a cleaved surfacecitations
Places of action
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article
Scanning tunneling spectroscopy on organic semiconductors : experiment and model
Abstract
Scanning-tunneling spectroscopy expts. performed on conjugated polymer films are compared with three-dimensional numerical model calcns. for charge injection and transport. It is found that if a sufficiently sharp tip is used, the field enhancement near the tip apex leads to a significant increase in the injected current, which can amt. to more than an order of magnitude and can even change the polarity of the predominant charge carrier. We show that when charge injection from the tip into the org. material predominates, it is possible to probe the electronic properties of the interface between the org. material and a metallic electrode directly by means of tip height vs. bias voltage measurements. Thus, one can det. the alignment of the MO energy levels at the buried interface, as well as the single-particle band gap of the org. material. By comparing the single-particle energy gap and the optical absorption threshold, it is possible to obtain an est. of the exciton binding energy. In addn., our calcns. show that by using a one-dimensional model, reasonable parameters can only be extd. from z-V and I-V curves if the tip apex radius is much larger than the tip height. In all other cases, the full three-dimensional problem needs to be considered.