| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zou, J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023A study on the effects of laser shock peening on the microstructure and substructure of Ti–6Al–4V manufactured by Selective Laser Meltingcitations
- 2016Pulsed Field Magnetization of Single-Grain Bulk YBCO Processed from Graded Precursor Powders
- 2016III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2011III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2009III-V compound semiconductor nanowirescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
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article
Ion-beam-produced structural defects in ZnO
Abstract
<p>We study the evolution of lattice defects in single-crystal ZnO bombarded with 60-keV (formula presented) and 300-keV (formula presented) ions at 77 and 300 K. To characterize ion-beam-produced structural defects, we use a combination of Rutherford backscattering/channeling (RBS/C) spectrometry, cross-sectional transmission electron microscopy (XTEM), x-ray photoelectron spectroscopy, and atomic force microscopy. Results show that ZnO exhibits strong dynamic annealing, and even high-dose bombardment with heavy (formula presented) ions at 77 K does not render ZnO amorphous. However, a crystalline-to-amorphous phase transition can be induced by irradiation with relatively light (formula presented) ions. In this latter case, amorphization is attributed to strong chemical effects of Si atoms implanted into the ZnO lattice, resulting in the stabilization of an amorphous phase. High-dose heavy-ion bombardment also results in a strong stoichiometric imbalance (loss of O) in the near-surface region. A variation in irradiation temperature from 77 up to 300 K has a minor effect on the damage buildup behavior in ZnO bombarded with Au ions. Data analysis also shows that a variation in the density of collision cascades by increasing ion mass from (formula presented) up to (formula presented) has a negligible effect on the damage buildup behavior. For both light- (formula presented) and heavy- (formula presented) ion bombardment regimes, XTEM reveals that ion irradiation produces energetically favorable planar defects which are parallel to the basal plane of the wurtzite structure of ZnO. Interestingly, our RBS/C study also reveals the formation of a middle defect peak between the surface and bulk peaks of disorder in Au-implanted ZnO, but not in Si-bombarded samples. The formation of this middle peak, most likely to be related to complex defect agglomeration processes, is rather unexpected and, to our knowledge, has not been observed in any other material. Physical mechanisms of defect formation in ZnO under ion bombardment are discussed based on these experimental findings.</p>