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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Azam, Siraj |
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Ospanova, Alyiya |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Chelikowsky, James R.
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article
Electronic structure and spin polarization of MnxGa1-xN
Abstract
<p>We present ab initio pseudopotential-density-functional calculations for the electronic structure of the dilute magnetic semiconductor MnxGa1-xN, with a realistic x=0.063, in its ordered ferromagnetic phase. We find that the introduction of Mn results in the formation of a 100% spin polarized similar to1.5 eV-wide impurity band, primarily due to hybridization of Mn 3d and N 2p orbitals. This band renders the material half metallic and supports effective-mass transport within it. As such, MnxGa1-xN is a highly suitable material for spin injectors. Coupled with the previously reported high Curie temperature and inherent compatibility with GaN technology of this material, it emerges as a serious candidate for the next generation of spintronic devices.</p>