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Kéghélian, P.
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article
Si-C bonding in films prepared by heterofullerene deposition
Abstract
We probed the electronic structure of mixed silicon-carbon Si<sub>x</sub>C<sub>1-x</sub> (x=0.12) films prepared from free silicon-doped fullerenes (heterofullerenes) deposited on silver thin film. The reactivity towards oxygen is also discussed. X-ray photoemission and Auger spectroscopies suggest that electron transfer from silicon to carbon atom is lower than in tetrahedral SiC compounds. Raman spectroscopy reveals a graphitization of the film associated with the formation of Si-C bonding under strong laser irradiation.