| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Das, D.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023Stress concentration targeted reinforcement using multi-material based 3D printingcitations
- 2014A new copper(I) coordination polymer with N.sub.2./sub.-donor schiff base and Its use as precursor for CuO nanoparticle: Spectroscopic, thermal and structural studiescitations
- 2008Effect of oxygen on growth and properties of diamond thin film deposited at low surface temperaturecitations
- 2008Effect of fibre diameter and cross-sectional shape on moisture transmission through fabrics
- 2004Correlation between plasma chemistry, microstructure and electronic properties of Si:H thin films prepared by hydrogen dilution
- 2002Calorimetry of hydrogen desorption from a-Si nanoparticlescitations
- 2001Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenationcitations
- 2000Synthesis of nanocrystalline nickel oxide by controlled oxidation of nickel nanoparticles and their humidity sensing properties
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article
Calorimetry of hydrogen desorption from a-Si nanoparticles
Abstract
The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 °C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too.