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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Fort, J.
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Publications (8/8 displayed)
- 2021Meeting Paris agreement objectives will temper seabird winter distribution shifts in the North Atlantic Oceancitations
- 2020Energy efficiency of latent heat storage systems in residential buildings: Coupled effects of wall assembly and climatic conditionscitations
- 2020Life cycle assessment of natural and recycled gypsum production in the Spanish contextcitations
- 2019Utilization of hydrophilic cellulose fibers for preparation of plaster with enhanced moisture control capability
- 2017Behavior of Sandstones Under Heat Treatmentcitations
- 2013Effect of temperature on water vapour transport properties
- 2013Thermal properties of contemporary lightweight cavity bricks: A semi-scale experimental study
- 2002Calorimetry of hydrogen desorption from a-Si nanoparticlescitations
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article
Calorimetry of hydrogen desorption from a-Si nanoparticles
Abstract
The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 °C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too.