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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bertran, E.
Universitat de Barcelona
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2023Advancements in Plasma-Enhanced Chemical Vapor Deposition for Producing Vertical Graphene Nanowallscitations
- 2014Arc-Discharge Synthesis of Iron Encapsulated in Carbon Nanoparticles for Biomedical Applicationscitations
- 2006In-situ monitoring of laser annealing by micro-Raman spectroscopy for hydrogenated silicon nanoparticles produced in radio frequency glow dischargecitations
- 2002Calorimetry of hydrogen desorption from a-Si nanoparticlescitations
- 2001Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenationcitations
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article
Calorimetry of hydrogen desorption from a-Si nanoparticles
Abstract
The process of hydrogen desorption from amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition (PECVD) has been analyzed by differential scanning calorimetry (DSC), mass spectrometry, and infrared spectroscopy, with the aim of quantifying the energy exchanged. Two exothermic peaks centered at 330 and 410 °C have been detected with energies per H atom of about 50 meV. This value has been compared with the results of theoretical calculations and is found to agree with the dissociation energy of Si-H groups of about 3.25 eV per H atom, provided that the formation energy per dangling bond in a-Si is about 1.15 eV. It is shown that this result is valid for a-Si:H films, too.