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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Odonnell, Kevin
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2019Room temperature cathodoluminescence quenching of Er3+ in AlNOErcitations
- 2015Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixingcitations
- 2012Photoluminescence of Eu-doped GaNcitations
- 2012Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping
- 2010Al1-xInxN/GaN bilayers: Structure, morphology, and optical propertiescitations
- 2009Luminescence of Eu ions in AlxGa1-xN across the entire alloy composition rangecitations
- 2008Rare earth doping of III-nitride alloys by ion implantationcitations
- 2006Rare earth doped III-nitrides for optoelectronicscitations
- 2006Influence of the annealing ambient on structural and optical properties of rare earth implanted GaN
- 2005Selectively excited photoluminescence from Eu- implanted GaNcitations
- 2004Development of CdSSe/CdS VCSELs for application to laser cathode ray tubes
- 2002Structural and optical properties of InGaN/GaN layers close to the critical layer thicknesscitations
- 2002Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: the role of intermixingcitations
- 2002Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mappingcitations
- 2001Compositional pulling effects in InxGa1_xN/GaN layerscitations
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article
Compositional pulling effects in InxGa1_xN/GaN layers
Abstract
<p>A depth-resolved study of the optical and structural properties of wurtzite InGaN/GaN bilayers grown by metallorganic chemical vapor deposition on sapphire substrates is reported. Depth-resolved cathodoluminescence (CL) and Rutherford backscattering spectrometry (RBS) were used to gain an insight into the compositional profile of a 75-nm thick InGaN epilayer in the direction of growth. CL acquired at increasing electron energies reveals a peak shift of about 25 meV to the blue when the electron beam energy is increased from 0.5 to ∼7 keV, and shows a small shift to lower energies between ∼7 and 9 keV. For higher accelerating voltages the emission energy peak remains constant. This behavior can be well accounted for by a linear variation of In content over depth. Such an interpretation conforms to the In/Ga profile derived from RBS, where a linear decrease of the In mole fraction from the near surface (∼0.20) down to the near GaN/InGaN interface (∼0.14) region fits the random spectra very well. Furthermore, by measuring the tetragonal distortion at different depths, using RBS/channeling, it is shown that regions of higher In content also appear to be more relaxed. This result suggests that strain hinders the incorporation of In atoms in the InGaN lattice, and is the driving force for the compositional pulling effect in InGaN films.</p>