| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zou, J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023A study on the effects of laser shock peening on the microstructure and substructure of Ti–6Al–4V manufactured by Selective Laser Meltingcitations
- 2016Pulsed Field Magnetization of Single-Grain Bulk YBCO Processed from Graded Precursor Powders
- 2016III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2011III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2009III-V compound semiconductor nanowirescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
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article
Damage buildup in GaN under ion bombardment
Abstract
<p>The damage buildup until amorphization in wurtzite GaN films under kev light (<sup>12</sup>C) and heavy (<sup>197</sup>Au) ion bombardment at room and liquid nitrogen (LN<sub>2</sub>) temperatures is studied by Rutherford backscattering/channeling (RBS/C) spectrometry and transmission electron microscopy (TEM). The effect of beam flux on implantation damage in GaN is reported. A marked similarity between damage buildup for light and heavy ion bombardment regimes is observed. The results point to substantial dynamic annealing of irradiation defects even during heavy ion bombardment at LN<sub>2</sub> temperature. Amorphization starts from the GaN surface with increasing ion dose for both LN<sub>2</sub> and room-temperature bombardment with light or heavy ions. A strong surface defect peak, seen by RBS/C, arises from an amorphous layer at the GaN surface, as indicated by TEM. The origin of such an amorphous layer is attributed to the trapping of mobile point defects by the GaN surface, as suggested by the flux behavior. However, in the samples implanted with light ions to low doses (1 × 10<sup>15</sup> cm<sup>-2</sup>), no amorphous layer on the GaN surface is revealed by TEM. Damage buildup is highly sigmodal for LN<sub>2</sub> temperature irradiation with light or heavy ions. Formation of planar defects in the crystal bulk is assumed to provide a "nucleation site" for amorphization with increasing ion dose during irradiation at LN<sub>2</sub> temperature. For room-temperature bombardment with heavy ions, the damage in the GaN bulk region saturates at a level lower than that of the amorphous phase, as measured by RBS/C, and amorphization proceeds from the GaN surface with increasing ion dose. For such a saturation regime at room temperature, implantation damage in the bulk consists of point-defect clusters and planar defects which are parallel to the basal plane of the GaN film. Various defect interaction processes in GaN during ion bombardment are proposed to explain the observed, somewhat unexpected behavior of disorder buildup.</p>