• Spence, D. J.
• Ennis, Christopher
• Tear, S.

Abstract

<p>The utility of chemical vapor deposition of silicon from silane gas as a potential route to interfaces has been investigated on Pd(100) using low-energy electron diffraction and scanning tunneling microscopy. Initial adsorption at room temperature leads to the formation of amorphous palladium silicide/silicon surface layer. Annealing to 650 K after low silane exposure (&lt; 5 L) results in subsurface diffusion of silicon with concomitant ejection of palladium atoms. Some surface silicide features also remain intact. Larger exposures (&gt;5 L) at room temperature, followed by 650 K anneal, result in formation of a crystalline (Formula presented) silicide reconstruction. This palladium silicide phase is thought to be of (Formula presented) stoichiometry.</p>

Topics

• impedance spectroscopy
• surface
• amorphous
• phase
• electron diffraction
• Silicon
• annealing
• chemical vapor deposition
• scanning tunneling microscopy
• palladium
• silicide