| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Darakchieva, Vanya
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2024Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmospherecitations
- 2024High-field/high-frequency electron spin resonances of Fe-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math> by terahertz generalized ellipsometry: Monoclinic symmetry effectscitations
- 2024High-field/high-frequency electron spin resonances of Fe-doped β-Ga2 O3 by terahertz generalized ellipsometry : Monoclinic symmetry effectscitations
- 2024Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicatecitations
- 2024Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structurescitations
- 2023Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substratescitations
- 2023Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor depositioncitations
- 2023Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifierscitations
- 2023Observations of very fast electron traps at SiC/high-κ dielectric interfacescitations
- 2023Observations of very fast electron traps at SiC/high-κ dielectric interfacescitations
- 2022Mg-doping and free-hole properties of hot-wall MOCVD GaNcitations
- 2022Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVDcitations
- 2022Strain and Composition Dependencies of the Near-Band-Gap Optical Transitions in Monoclinic (AlxGa1−x)2O3 Alloys with Coherent Biaxial In-Plane Strain on Ga2O3(010)citations
- 2022Thermal conductivity of AlxGa1-xN (0 <= x <= 1) epitaxial layerscitations
- 2022Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVDcitations
- 2022Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN : Understanding Nucleation and Design of Growth Strategiescitations
- 2022Ti thin films deposited by high-power impulse magnetron sputtering in an industrial system : Process parameters for a low surface roughnesscitations
- 2022Doped semiconducting polymer nanoantennas for tunable organic plasmonicscitations
- 2021Tunable Structural Color Images by UV-Patterned Conducting Polymer Nanofilms on Metal Surfacescitations
- 2020Optimization of GaN Nanowires Reformation Process by Metalorganic Chemical Vapor Deposition for Device-Quality GaN Templatescitations
- 2020Conductive polymer nanoantennas for dynamic organic plasmonicscitations
- 2019Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivitycitations
- 2015Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InNcitations
- 2014Effect of Mg doping on the structural and free-charge carrier properties of InNcitations
- 2013Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effectcitations
- 2012Direct graphene growth on Co3O4(111) by molecular beam epitaxycitations
- 2011Standard-free composition measurements of Alx In1–xN by low-loss electron energy loss spectroscopycitations
- 2011Epitaxial CVD growthof sp2-hybridized boron nitrideusing aluminum nitride as buffer layercitations
- 2010Structural anisotropy of nonpolar and semipolar InN epitaxial layerscitations
Places of action
| Organizations | Location | People |
|---|
article
High-field/high-frequency electron spin resonances of Fe-doped <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mrow><mml:mi>Ga</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math> by terahertz generalized ellipsometry: Monoclinic symmetry effects
Abstract
<jats:p>We demonstrate detection and measurement of electron paramagnetic spin resonances (EPR) of iron defects in <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mrow><a:mi>β</a:mi><a:mtext>−</a:mtext><a:msub><a:mi>Ga</a:mi><a:mn>2</a:mn></a:msub><a:msub><a:mi mathvariant="normal">O</a:mi><a:mn>3</a:mn></a:msub></a:mrow></a:math> utilizing generalized ellipsometry at frequencies between 110 and 170 GHz. The experiments are performed on an Fe-doped single crystal in a free-beam configuration in reflection at <c:math xmlns:c="http://www.w3.org/1998/Math/MathML"><c:msup><c:mn>45</c:mn><c:mo>∘</c:mo></c:msup></c:math> and magnetic fields between 3 and 7 T. In contrast with low-field, low-frequency EPR measurements, we observe all five transitions of the <d:math xmlns:d="http://www.w3.org/1998/Math/MathML"><d:mrow><d:mi>s</d:mi><d:mo>=</d:mo><d:mn>5</d:mn><d:mo>/</d:mo><d:mn>2</d:mn></d:mrow></d:math> high-spin state <e:math xmlns:e="http://www.w3.org/1998/Math/MathML"><e:msup><e:mrow><e:mi>Fe</e:mi></e:mrow><e:mrow><e:mn>3</e:mn><e:mo>+</e:mo></e:mrow></e:msup></e:math> simultaneously. We confirm that ferric <f:math xmlns:f="http://www.w3.org/1998/Math/MathML"><f:msup><f:mrow><f:mi>Fe</f:mi></f:mrow><f:mrow><f:mn>3</f:mn><f:mo>+</f:mo></f:mrow></f:msup></f:math> is predominantly found at octahedrally coordinated Ga sites. We obtain the full set of fourth-order monoclinic zero-field splitting parameters for both octahedrally and tetrahedrally coordinated sites by employing measurements at multiple sample azimuth rotations. The capability of high-field EPR allows us to demonstrate that simplified second-order orthorhombic spin Hamiltonians are insufficient, and fourth-order terms as well as consideration of the monoclinic symmetry are needed. These findings are supported by computational approaches based on density-functional theory for second-order and on ligand-field theory for fourth-order parameters of the spin Hamiltonian. Terahertz ellipsometry is a way to measure spin resonances in a cavity-free setup. Its possibility of varying the probe frequency arbitrarily without otherwise changing the experimental setup offers unique means of truly disentangling different components of highly anisotropic spin Hamiltonians.</jats:p><jats:sec><jats:title/><jats:supplementary-material><jats:permissions><jats:copyright-statement>Published by the American Physical Society</jats:copyright-statement><jats:copyright-year>2024</jats:copyright-year></jats:permissions></jats:supplementary-material></jats:sec>