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Xing, Kaijian
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article
High-field magnetotransport studies of surface-conducting diamonds
Abstract
<p>The observation of a strong and tunable spin-orbit interaction (SOI) in surface-conducting diamond opens up a new avenue for building diamond-based spintronics. Herein we provide a comprehensive method to analyze the magnetotransport behavior of surface-conducting hydrogen-terminated diamond (H-diamond) Hall bar devices and Al/Al<sub>2</sub>O<sub>3</sub>/V<sub>2</sub>O<sub>5</sub>/H-diamond metal-oxide semiconductor field-effect transistors, respectively. By adopting a significantly improved theoretical magnetotransport model, the reduced magnetoconductance can be accurately explained both within and outside the quantum diffusive regime. The model is valid for all doping strategies of surface-conducting diamond tested. From this analysis, we find that the orbital magnetoresistance, a classical effect distinct from the SOI, dominates the magnetotransport in surface-conducting diamond at high magnetic fields. Furthermore, local hole mobilities as high as 1000-3000cm<sup>2</sup>/Vs have been observed in this work, indicating the possibility of diamond-based electronics with ultrahigh hole mobilities at cryogenic temperatures.</p>