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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Legrand, Marie
French National Centre for Scientific Research
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2023The Impact of X‐Ray Radiation on Chemical and Optical Properties of Triple‐Cation Lead Halide Perovskite: from the Surface to the Bulkcitations
- 2022In – depth chemical and optoelectronic analysis of triple-cation perovskite thin films by combining XPS profiling and PL Imagingcitations
- 2021Mapping Transport Properties of Halide Perovskites via Short-Time-Dynamics Scaling Laws and Subnanosecond-Time-Resolution Imagingcitations
- 2021In – depth chemical and optoelectronic analysis of triple-cation perovskite thin films by combining XPS profiling and PL Imagingcitations
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article
Mapping Transport Properties of Halide Perovskites via Short-Time-Dynamics Scaling Laws and Subnanosecond-Time-Resolution Imaging
Abstract
The excellent optoelectronic and transport properties of halide perovskites have led to the rapid development of perovskite-based optoelectronic devices. A fundamental understanding of charge-carrier dynamics, as well as the implementation of physical models able to accurately describe their behaviour, is essential for further improvements in the field. Here, combining advanced modeling and characterization, a method for analyzing the short time dynamics of time-resolved fluorescence imaging (TRFLIM) decays is demonstrated. A theoretical scaling law for the time derivative of transient photoluminescence decays as a function of excitation power is extracted. This scaling law, computed from classical drift-diffusion equations, defines an innovative and simple way to extract quantitative values for several transport parameters, including the external radiative-recombination coefficient. The model is notably applied on a set of images acquired with a temporal shift of 250 ps to map the top-surface recombination velocity of a triple-cation mixed-halide perovskite thin film at the microscale. The development of high-time-resolution imaging techniques coupled with a scaling method for analyzing short time dynamics provides a solid platform for the investigation of local heterogeneities in semiconductor materials and the accurate determination of the main parameters governing their carrier transport.