| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shields, Philip, A.
University of Bath
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxycitations
- 2023Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxycitations
- 2022Etching of the SiGaxN yPassivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core-Shell Nanowires by MOVPEcitations
- 2021Employing Cathodoluminescence for Nanothermometry and Thermal Transport Measurements in Semiconductor Nanowirescitations
- 2021Point Defects in InGaN/GaN Core-Shell Nanorodscitations
- 2020Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscopecitations
- 2020Influence of the reactor environment on the selective area thermal etching of GaN nanohole arrayscitations
- 2017Evolution of the m-plane Quantum Well Morphology and Composition within a GaN/InGaN Core-Shell Structurecitations
- 2013Coalescence-induced planar defects in GaN layers grown on ordered arrays of nanorods by metal–organic vapour phase epitaxycitations
- 2012Growth of crack-free GaN epitaxial thin films on composite Si(111)/polycrystalline diamond substrates by MOVPEcitations
- 2011Advances in nano-enabled GaN photonic devices
- 2009Enhanced light extraction by photonic quasi-crystals in GaN blue LEDscitations
- 2007Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy
Places of action
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article
Point Defects in InGaN/GaN Core-Shell Nanorods
Abstract
<p>Core-shell nanorod based light-emitting diodes (LEDs) with their exposed non-polar surfaces have the potential to overcome the limitations of planar LEDs by circumventing the quantum confined stark effect. In this experiment, InGaN/GaN core-shell nanorods were fabricated by a combination of top-down etching and bottom-up regrowth using metal-organic vapour phase epitaxy. When viewing the nanorods along their long axis, monochromatic cathodoluminescence maps taken at the GaN near-band-edge emission energy (3.39 eV) reveal a ring-like region of lower emission intensity. The diameter of this ring is found to be 530 (±20)nm corresponding to the ∼510 nm diameter nickel etch masks used to produce the initial GaN nanopillars. Thus, the dark ring corresponds to the regrowth interface. To understand the origin of the ring, scanning transmission electron microscopy (STEM) and cathodoluminescence (CL) hyperspectral mapping at 10K were performed. STEM imaging reveals the absence of extended defects in the nanorods and indeed near the regrowth interface. Monochromatic CL maps recorded at 10K show that the ring remains dark for monochromatic maps taken at the GaN near-band-edge emission energy (3.47 eV) but is bright when considering the donor-acceptor pair emission energy (3.27 eV). This peculiar anticorrelation indicates that the dark ring originates from an agglomeration of point defects associated with donor-acceptor pair emission. The point defects are incorporated and buried at the GaN regrowth interface from the chemical and/or physical damage induced by etching and lower the radiative recombination rate; limiting the radiative efficiency close to the regrowth interface. </p>