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Publications (7/7 displayed)
- 2024Angle-resolved X-ray photoelectron spectroscopy intensity modeling of SiNx ultrathin layer grown on Si (100) and Si (111) substrates by N2 plasma treatmentcitations
- 2020Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivationcitations
- 2012Carbon diffusion and reactivity in Mn5Ge3 thin filmscitations
- 2005Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopiescitations
- 2003First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPEScitations
- 2003First stages of the InP(100) surfaces nitridation studied by AES, EELS and EPEScitations
- 2002Study of InP(100) surface nitridation by x-ray photoelectron spectroscopy.citations
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article
Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation
Abstract
The structural and optical properties of individual ultra-long GaAs nanowires (NWs) were studied after different nitrogen passivation process conditions. The surface morphology of the NWs after passivation was characterized by high resolution transmission electron microscopy (HRTEM) and high angle annular dark field (HAADF) imaging. Electron energy loss spectroscopy (EELS) confirmed the presence of nitrogen on the NW surface. Micro-photoluminescence (µ-PL) on single NWs indicated an increase of the luminescence intensity upon passivation. This work reveals the efficacy of a plasma passivation process on complex nanometer-scale morphologies.