| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Schorr, Susan
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 2024The big bang of halide perovskites: The starting point of crystallization
- 2023Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors
- 2023Understanding the growth mechanism of BaZrS 3 chalcogenide perovskite thin films from sulfurized oxide precursorscitations
- 2023Synergistic Role of Water and Oxygen Leads to Degradation in Formamidinium-Based Halide Perovskites
- 2023Synergistic Role of Water and Oxygen Leads to Degradation in Formamidinium-Based Halide Perovskitescitations
- 2023Solvent and A-Site Cation Control Preferred Crystallographic Orientation in Bromine-Based Perovskite Thin Films
- 2023Interplay of Static and Dynamic Disorder in the Mixed-Metal Chalcohalide Sn2SbS2I3
- 2023Understanding the growth mechanism of BaZrS<sub>3</sub> chalcogenide perovskite thin films from sulfurized oxide precursorscitations
- 2023Stability of Cu2ZnSnSe4/CdS heterojunction based solar cells under soft post-deposition thermal treatmentscitations
- 2020The influence of deuteration on the crystal structure of hybrid halide perovskites: a temperature-dependent neutron diffraction study of FAPbBr(3)citations
- 2020Metal-containing ceramic nanocomposites synthesized from metal acetates and polysilazane
- 2020Atomic scale structure and its impact on the band gap energy for Cu2Zn(Sn,Ge)Se(4)kesterite alloys
- 2020The influence of deuteration on the crystal structureof hybrid halide perovskites ; a temperature-depen-dent neutron diffraction study of FAPbBr3
- 2020Atomic scale structure and its impact on the band gap energy for Cu$_{2}$Zn(Sn,Ge)Se$_{4}$ kesterite alloyscitations
- 2019The Role of Bulk and Interface Recombination in High-Efficiency Low-Dimensional Perovskite Solar Cellscitations
- 2019The Role of Bulk and Interface Recombination in High‐Efficiency Low‐Dimensional Perovskite Solar Cellscitations
- 2019The Effect of Copper Vacancies on the Anion Position of Chalcopyrite Type CuGaS<sub>2</sub>citations
- 2018Synthesis, theoretical and experimental characterisation of thin film Cu2Sn1-xGexS3 ternary alloys (x = 0 to 1): Homogeneous intermixing of Sn and Gecitations
- 2009Structural Properties of Chalcopyrite-related 1:3:5 Copper-poor Compounds and their Influence on Thin-film Devicescitations
Places of action
| Organizations | Location | People |
|---|
article
Understanding the growth mechanism of BaZrS<sub>3</sub> chalcogenide perovskite thin films from sulfurized oxide precursors
Abstract
<jats:title>Abstract</jats:title><jats:p>Barium zirconium sulfide (BaZrS<jats:sub>3</jats:sub>) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable solution for effective synthesis, especially from the perspective of circumventing the difficulty of handling alkali earth metals. In this work, we explore in detail the synthesis of BaZrS<jats:sub>3</jats:sub> from Ba-Zr-O oxide precursor films sulfurized at temperatures ranging from 700 °C to 1000 °C. We propose a formation mechanism of BaZrS<jats:sub>3</jats:sub> based on a two-step reaction involving an intermediate amorphization step of the BaZrO<jats:sub>3</jats:sub> crystalline phase. We show how the diffusion of sulfur (S) species in the film is the rate-limiting step of this reaction. The processing temperature plays a key role in determining the total fraction of conversion from oxide to sulfide phase at a constant flow rate of the sulfur-containing H<jats:sub>2</jats:sub>S gas used as a reactant. Finally, we observe the formation of stoichiometric BaZrS<jats:sub>3</jats:sub> (1:1:3), even under Zr-rich precursor conditions, with the formation of ZrO<jats:sub>2</jats:sub> as a secondary phase. This marks BaZrS<jats:sub>3</jats:sub> quite unique among the other types of chalcogenides, such as chalcopyrites and kesterites, which can instead accommodate quite a large range of non-stoichiometric compositions. This work opens up a pathway for further optimization of the BaZrS<jats:sub>3</jats:sub> synthesis process, straightening the route towards future applications of this material.</jats:p>