| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Anna, Fontcuberta I. Morral
École Polytechnique Fédérale de Lausanne
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2023Understanding the growth mechanism of BaZrS 3 chalcogenide perovskite thin films from sulfurized oxide precursorscitations
- 2023Understanding the growth mechanism of BaZrS<sub>3</sub> chalcogenide perovskite thin films from sulfurized oxide precursorscitations
- 2023The 2022 applied physics by pioneering women: a roadmapcitations
- 2022Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphidecitations
- 2022Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorbercitations
- 2022Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growthcitations
- 2022The Advantage of Nanowire Configuration in Band Structure Determinationcitations
- 2021The path towards 1 µm monocrystalline Zn<sub>3</sub>P<sub>2</sub> films on InP: substrate preparation, growth conditions and luminescence propertiescitations
- 2020Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation.
- 2020Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisationcitations
- 2019Highly sensitive piezotronic pressure sensors based on undoped GaAs nanowire ensemblescitations
- 2019Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopycitations
- 2018Photophysics behind highly luminescent two-dimensional hybrid perovskite (CH<sub>3</sub>(CH<sub>2</sub>)<sub>2</sub>NH<sub>3</sub>)<sub>2</sub>(CH<sub>3</sub>NH<sub>3</sub>)<sub>2</sub>Pb<sub>3</sub>Br<sub>10</sub> thin filmscitations
- 2018High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowirescitations
- 2018Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cellscitations
- 2017Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowirescitations
- 2014Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayercitations
- 2014Gold-free ternary III-V antimonide nanowire arrays on silicon : twin-free down to the first bilayercitations
Places of action
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article
Understanding the growth mechanism of BaZrS<sub>3</sub> chalcogenide perovskite thin films from sulfurized oxide precursors
Abstract
<jats:title>Abstract</jats:title><jats:p>Barium zirconium sulfide (BaZrS<jats:sub>3</jats:sub>) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable solution for effective synthesis, especially from the perspective of circumventing the difficulty of handling alkali earth metals. In this work, we explore in detail the synthesis of BaZrS<jats:sub>3</jats:sub> from Ba-Zr-O oxide precursor films sulfurized at temperatures ranging from 700 °C to 1000 °C. We propose a formation mechanism of BaZrS<jats:sub>3</jats:sub> based on a two-step reaction involving an intermediate amorphization step of the BaZrO<jats:sub>3</jats:sub> crystalline phase. We show how the diffusion of sulfur (S) species in the film is the rate-limiting step of this reaction. The processing temperature plays a key role in determining the total fraction of conversion from oxide to sulfide phase at a constant flow rate of the sulfur-containing H<jats:sub>2</jats:sub>S gas used as a reactant. Finally, we observe the formation of stoichiometric BaZrS<jats:sub>3</jats:sub> (1:1:3), even under Zr-rich precursor conditions, with the formation of ZrO<jats:sub>2</jats:sub> as a secondary phase. This marks BaZrS<jats:sub>3</jats:sub> quite unique among the other types of chalcogenides, such as chalcopyrites and kesterites, which can instead accommodate quite a large range of non-stoichiometric compositions. This work opens up a pathway for further optimization of the BaZrS<jats:sub>3</jats:sub> synthesis process, straightening the route towards future applications of this material.</jats:p>