| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dimitrievska, Mirjana
Swiss Federal Laboratories for Materials Science and Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2023Understanding the growth mechanism of BaZrS 3 chalcogenide perovskite thin films from sulfurized oxide precursorscitations
- 2023Understanding the growth mechanism of BaZrS<sub>3</sub> chalcogenide perovskite thin films from sulfurized oxide precursorscitations
- 2022Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphidecitations
- 2022Showcasing the optical properties of monocrystalline zinc phosphide thin films as an earth-abundant photovoltaic absorbercitations
- 2022The Advantage of Nanowire Configuration in Band Structure Determinationcitations
- 2021The path towards 1 µm monocrystalline Zn<sub>3</sub>P<sub>2</sub> films on InP: substrate preparation, growth conditions and luminescence propertiescitations
- 2016Structural and Dynamical Trends in Alkali-Metal Silanides Characterized by Neutron-Scattering Methodscitations
- 20168.2% pure selenide kesterite thin-film solar cells from large-area electrodeposited precursorscitations
Places of action
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article
The path towards 1 µm monocrystalline Zn<sub>3</sub>P<sub>2</sub> films on InP: substrate preparation, growth conditions and luminescence properties
Abstract
<jats:title>Abstract</jats:title><jats:p>Semiconductors made with earth abundant elements are promising as absorbers in future large-scale deployment of photovoltaic technology. This paper reports on the epitaxial synthesis of monocrystalline zinc phosphide <jats:inline-formula><jats:tex-math><?CDATA $( {{{Z}}{{{n}}_3}{{{P}}_2}} )$?></jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"><mml:mfenced close=")" open="("><mml:mrow><mml:mrow><mml:mtext>Z</mml:mtext></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mtext>n</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mtext>P</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:mrow></mml:mfenced></mml:math><jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="jpenergyabf723ieqn1.gif" xlink:type="simple" /></jats:inline-formula> films using molecular beam epitaxy with thicknesses up to 1 <jats:italic>µ</jats:italic>m thickness on InP (100) substrates, as demonstrated by high resolution transmission electron microscopy and x-ray diffraction. We explain the mechanisms by which thick monocrystalline layers can form. We correlate the crystalline quality with the optical properties by photoluminescence at 12 K. Polycrystalline and monocrystalline films exhibit dissimilar photoluminescence below the bandgap at 1.37 and 1.30 eV, respectively. Band edge luminescence at 1.5 eV is only detected for monocrystalline samples. This work establishes a reliable method for fabricating high-quality <jats:inline-formula><jats:tex-math><?CDATA ${{Z}}{{{n}}_3}{{{P}}_2}$?></jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"><mml:mrow><mml:mtext>Z</mml:mtext></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mtext>n</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mtext>P</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math><jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="jpenergyabf723ieqn2.gif" xlink:type="simple" /></jats:inline-formula> thin films that can be employed in next generation photovoltaic applications.</jats:p>