| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hutter, Os
Northumbria University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Photonic Curing for Emerging Photovoltaic Absorbers
- 2022Sodium Fluoride Doping Approach to CdTe Solar Cellscitations
- 2022Routes to Increase Performance for Antimony Selenide Solar Cells using Inorganic Hole Transport Layerscitations
- 2022Defect engineering in antimony selenide thin film solar cellscitations
- 2022Exploring the Role of Temperature and Hole Transport Layer on the Ribbon Orientation and Efficiency of Sb2Se3 cells Deposited via Thermal Evaporation
- 2020Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxycitations
- 2020Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cellscitations
- 2019Chemical etching of Sb2Se3 solar cellscitations
- 2018Self-catalyzed CdTe wirescitations
Places of action
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article
Chemical etching of Sb2Se3 solar cells
Abstract
<p>The effect of (NH<sub>4</sub>)<sub>2</sub>S and CS<sub>2</sub> chemical etches on surface chemistry and contacting in Sb<sub>2</sub>Se<sub>3</sub> solar cells was investigated via a combination of x-ray photoemission spectroscopy (XPS) and photovoltaic device analysis. Thin film solar cells were produced in superstrate configuration with an absorber layer deposited by close space sublimation. Devices of up to 5.7% efficiency were compared via current–voltage measurements (J–V) and temperature-dependent current–voltage (J–V–T) analysis. XPS analysis demonstrated that both etching processes were successful in removing Sb<sub>2</sub>O<sub>3</sub> contamination, while there was no decrease in free elemental selenium content by either etch, in contrast to prior work. Using J–V–T analysis the removal of Sb<sub>2</sub>O<sub>3</sub> at the back surface in etched samples was found to improve contacting by reducing the potential barrier at the back contact from 0.43 eV to 0.26 eV and lowering the series resistance. However, J–V data showed that due to the decrease in shunt resistance and short-circuit current as a result of etching, the devices show a lower efficiency following both etches, despite a lowering of the series resistance. Further optimisation of the etching process yielded an improved efficiency of 6.6%. This work elucidates the role of surface treatments in Sb<sub>2</sub>Se<sub>3</sub> devices and resolves inconsistencies in previously published works.</p>