| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schaller, Richard
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Structural Evolution and Photoluminescence Quenching across the FASnI3–xBrx (x = 0–3) Perovskitescitations
- 2022Enhancing and Extinguishing the Different Emission Features of 2D (EA<sub>1−</sub><i><sub>x</sub></i>FA<i><sub>x</sub></i>)<sub>4</sub>Pb<sub>3</sub>Br<sub>10</sub> Perovskite Filmscitations
- 2022Intrinsic formamidinium tin iodide nanocrystals by suppressing the Sn(IV) impurities
- 2022Non-Equilibrium Lattice Dynamics in Photo-Excited Two-Dimensional Perovskitescitations
- 2021Tunable broad light emission from 3D "Hollow" Bromide Perovskites through Defect Engineeringcitations
- 2020Systematic study of shockley-read-hall and radiative recombination in GaN on Al<sub>2</sub>O<sub>3</sub>, freestanding GaN, and GaN on Sicitations
- 2020Three-dimensional Lead Iodide Perovskitoid Hybrids with High X-ray Photoresponsecitations
- 2020Organic Cation Alloying on Intralayer A and Interlayer A’ sites in 2D Hybrid Dion-Jacobson Lead Bromide Perovskites (A’)(A)Pb2Br7citations
- 2020Negative Pressure Engineering with Large Cage Cations in 2D Halide Perovskites Causes Lattice Softeningcitations
- 2020Water Stable 1D Hybrid Tin(II) Iodide Emits Broad Light with 36% Photoluminescence Quantum Efficiencycitations
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article
Systematic study of shockley-read-hall and radiative recombination in GaN on Al<sub>2</sub>O<sub>3</sub>, freestanding GaN, and GaN on Si
Abstract
<jats:title>Abstract</jats:title><jats:p>Here we study and correlate structural, electrical, and optical properties of three GaN samples: GaN grown by metalorganic chemical vapor deposition on sapphire (GaN/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>), freestanding GaN crystals grown by the high nitrogen pressure solution method (HNPS GaN), and GaN grown by hydride vapor phase epitaxy on silicon (GaN/Si). Defect and impurity densities and carrier concentrations are quantified by x-ray diffraction, secondary mass ion spectroscopy, and Hall effect studies, respectively. Power-dependent photoluminescence measurements reveal GaN near-band-edge emissions from all samples having mixtures of free exciton and band-to-band transitions. Only the defect luminescence in the GaN/Si sample remains unsaturated, in contrast to those from the HNPS GaN and GaN/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> samples. Carrier lifetimes, extracted from time-resolved photoluminescence measurements, and internal quantum efficiencies, extracted from temperature-dependent photoluminescence measurements, are used to extract radiative and nonradiative lifetimes. Shockley–Read–Hall (A) and radiative recombination coefficients (B) are then calculated accordingly. Overall, the A coefficient is observed to be highly sensitive to the point defect density rather than dislocation density, as evidenced by three orders of magnitude reduction in threading dislocation density reducing the A coefficient by one order of magnitude only. The B coefficient, while comparable in the higher quality and lowly doped GaN/Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and HNPS GaN samples, was severely degraded in the GaN/Si sample due to high threading dislocation density and doping concentration.</jats:p>