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Wang, Zhong Lin
in Cooperation with on an Cooperation-Score of 37%
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article
Piezoelectric tunability and topological insulator transition in a GaN/InN/GaN quantum-well device
Abstract
<jats:title>Abstract</jats:title><jats:p>Using an 8-band <jats:inline-formula><jats:tex-math><?CDATA ${k}{p}$?></jats:tex-math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"><mml:mrow><mml:mrow><mml:mtext mathvariant="bold">k</mml:mtext></mml:mrow></mml:mrow><mml:mo>⋅</mml:mo><mml:mrow><mml:mrow><mml:mtext mathvariant="bold">p</mml:mtext></mml:mrow></mml:mrow></mml:math><jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="jpmaterabf7dcieqn1.gif" xlink:type="simple" /></jats:inline-formula> model it is demonstrated through the combination of strain and piezoelectricity that increasing the InN quantum-well thickness of a GaN-InN-GaN device changes the InN material from a positive bandgap semiconductor to a topological insulator (negative bandgap). Moderate strain tuning of a four monolayer InN layer for a GaN-InN-GaN device reveals a giant (one order of magnitude) tuning of current–voltage characteristics. It is verified that piezoelectricity plays an important role in controlling electron transport through the InN layer.</jats:p>